點解最近D Samsung Ram 粒晶片唔係samsung 而係SEC既

其實 Samsung 由 2000年開始統一 marking, 全名多數是舊貨, 不是假野, 無問題.
Samsung Semiconductor RAM chip marking & reference









On chip top

圖片參考：http://www.idhw.com/visual/chip/samsung/km416s1020ct_6b.gif

SEC KOREA 843
KM416S1020CT-G8
TPI132D3


圖片參考：http://www.idhw.com/visual/chip/samsung/km44c4100j_7.gif

KOREA
423Y
KM44C4100J-7


圖片參考：http://www.idhw.com/visual/chip/samsung/k4d26323ra_gc2b.gif

SAMSUNG 148
K4D26323RA-GC2B
WFHE17BX KOREA


圖片參考：http://www.idhw.com/visual/chip/samsung/k4h560838d_tcc4.gif

SAMSUNG 226
K4H560838D-TCC4
BDE7226A KOREA
Samsung changed markings on the chip on 1st Jan 2000 to a new system.




Samsung Semiconductor RAM chip marking

SAMSUNG
SEC
www.intl.samsungsemi.com
www.sec.samsung.com

K4
KM
K4 - Samsung Memory
KM - Samsung Semiconductor

843 - date of manufacture
8 - year of manufacture (8 - 1998, 9 - 1999, ...)
43 - week of manufacture

4 - RAM type
23 - Mask ROM
29 - NAND-Flash
4 - DRAM
6 - Asynchronous SRAM
7 - Synchronous SRAM

16 - bit organization
1 - x1bit
4 - x4bit
8 - x8bit
9 - x9bit
16 - x16bit
32 - x32bit

V - voltage
C - 5.0V
V - 3.3V
U - 3.0V
S - 2.5V
Q - 2.5V
R - 2.0V

17 - memory density
25 - 256KBit
51 - 512KBit
1 - 1MBit
4 - 4MBit
8 - 8MBit
16 - 16MBit
32 - 32MBit
64 - 64MBit

0 - refresh
0 - 1024 (4MD), 4096 (16MD), 8192 (64MD)
1 - 512 (4MD), 2048 (16MD), 4096 (64MD)
2 - 1024 (16MD)

5 - RAM type
0 - FP mode
1 - ?
2 - ?
3 - FP mode (quad CAS)
4 - EDO mode
5 - EDO mode (quad CAS)

C - die revision
[none] - 1st generation
A - 2nd generation
B - 3rd generation
C, D, ...

SJ - package option
J - SOJ
K - SOJ (shrinked package)
T - TSOP II
S - TSOP II (shrinked package)
C - CSP

E - Temperature
[none] - normal range (0 to 70°C)
E - extended range (-25 to 85°C)
I - industrial range (-40 to 85°C)

E - power (DC current)
[none] normal power
E - low power

G8 - min cycle time
4 - 40ns
45 - 45ns
5 - 50ns
55 - 55ns
6 - 60ns
7- 70ns
G8 - 8ns CAS2 PC100
10 - 10ns CAS3 PC66
GL - 10ns CAS3 PC100
GH - 10ns CAS2 PC100

TPI132D3 - Serialization code
?